Light emitting device and light source module having thereof

ABSTRACT

A light emitting device according to an embodiment includes a body having a recess; a light emitting chip disposed in the recess; and a first dampproof layer sealing the light emitting chip and extended from a surface of the light emitting chip to a bottom of the recess, wherein the light emitting chip includes a wavelength range of 100 nm to 280 nm, and the first dampproof layer includes a fluororesin-based material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation application of U.S. patentapplication Ser. No. 15/329,396 filed Jan. 26, 2017, which is a U.S.National Stage Application under 35 U.S.C. § 371 of PCT Application No.PCT/KR2015/007423, filed Jul. 17, 2015, which claims priority to KoreanPatent Application No. 10-2014-0097088, filed Jul. 30, 2014, whoseentire disclosures are hereby incorporated by reference.

BACKGROUND 1. Field

The present invention relates to a light emitting device and a lightsource module including the same.

2. Background

A light emitting diode may configure a light emitting source by usingcompound semiconductor materials such as GaAs-based, AlGaAs-based,GaN-based, InGaN-based and InGaAlP-based materials.

Such a light emitting diode is packaged and used as a light emittingdevice emitting various colors, and the light emitting device is used asa light source in various fields such as a lighting indicator displayinga color, a character indicator, and an image indicator.

In particular, in the case of an ultraviolet light emitting diode (UVLED), it is used for sterilization and purification in the case of ashort wavelength, and it may be used in an exposure apparatus or acuring apparatus in the case of a long wavelength. However, theenvironment in which the UV LED of a short wavelength is applied ismostly highly humid or inside water, so that dampproof and waterprooffunctions are deteriorated, and thus device failure is caused andoperation reliability may be deteriorated.

DISCLOSURE Technical Problem

The embodiment provides a light emitting device having a new waterproofand dampproof structure.

The embodiment provides a light emitting device having a dampproof layercovering a surface of a light emitting chip.

The embodiment provides a light emitting device having a dampproof layercovering a surface of a body in which a light emitting chip is disposed.

The embodiment provides a light emitting device including a dampprooflayer extended from a light transmitting layer disposed on a lightemitting chip to a surface of a body.

The embodiment provides a light emitting device having a plurality ofdampproof layers covering a surface of body and a surface of a lightemitting chip.

The embedment provides a light emitting device having a body and adampproof layer covering a surface of a substrate.

The embodiment provides a light emitting device having a dampproof layerincluding an ultraviolet light emitting chip and fluorine and a lightsource module.

The embodiment provides a light emitting device having a dampproof layerprotecting an ultraviolet light emitting chip and a protection devicefrom water or moisture and a light source module.

The embodiment may improve the reliability of an ultraviolet lightsource module.

Technical Solution

According to an embodiment, there is provided a light emitting deviceincluding a body having a recess; a light emitting chip disposed in therecess; and a first dampproof layer sealing the light emitting chip andextended from a surface of the light emitting chip to a bottom of therecess, and the light emitting chip includes a wavelength range of 100nm to 280 nm, and the first dampproof layer includes a fluororesin-basedmaterial.

According to an embodiment, there is provided a light emitting deviceincluding a body having a recess; a light emitting chip disposed in therecess; a light transmitting layer disposed on the recess, and a firstdampproof layer extended from an upper surface of the light transmittinglayer to an upper surface of the body, and the light emitting chipincludes a wavelength range of 100 nm to 280 nm, and the first dampprooflayer includes a fluororesin-based material.

According to an embodiment, there is provided a light source moduleincluding a light emitting device having a first dampproof layer on asurface of a body; and a circuit board disposed below the body of thelight emitting device, and the first dampproof layer of the lightemitting device is extended to a side surface of the body and an uppersurface of the circuit board.

Advantageous Effects

The embodiment may be provided as a waterproof module within a productapplied to high humidity and underwater environments.

The embodiment may be provided as a sterilizing device in a highhumidity environment and underwater.

The embodiment may reduce transmission loss of a UV-C wavelength.

The embodiment may minimize discoloration and deterioration by UV-C.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments will be described in detail with reference to thefollowing drawings in which like reference numerals refer to likeelements wherein:

FIG. 1 is a perspective view of a light emitting device according to afirst embodiment;

FIG. 2 is a perspective view in which a light transmitting layer isremoved in the FIG. 1;

FIG. 3 is a floor plan view of the light emitting device of the FIG. 1in which the light transmitting layer is removed;

FIG. 4 is a rear view of the light emitting device of the FIG. 1;

FIG. 5 is an A-A side cross-sectional view of the light emitting deviceof the FIG. 1;

FIG. 6 is a B-B side cross-sectional view of the light emitting deviceof the FIG. 3;

FIG. 7 is a side cross-sectional view of a light emitting deviceaccording to a second embodiment;

FIG. 8 is a side cross-sectional view of a light emitting deviceaccording to a third embodiment;

FIG. 9 is a side cross-sectional view of a light emitting deviceaccording to a fourth embodiment;

FIG. 10 is a side cross-sectional view of a light emitting deviceaccording to a fifth embodiment;

FIG. 11 is a side cross-sectional view of a light emitting deviceaccording to a sixth embodiment;

FIG. 12 is a side cross-sectional view of a light emitting deviceaccording to a seventh embodiment;

FIG. 13 is a side cross-sectional view of a light emitting deviceaccording to an eighth embodiment;

FIG. 14 is a side cross-sectional view of a light emitting deviceaccording to a ninth embodiment;

FIG. 15 is a side cross-sectional view of a light source moduleaccording to a tenth embodiment;

FIG. 16 is a side cross-sectional view of a light source moduleaccording to an eleventh embodiment;

FIG. 17 is a side cross-sectional view of a light source moduleaccording to a twelfth embodiment;

FIG. 18 is a side cross-sectional view of a light source moduleaccording to a thirteenth embodiment;

FIG. 19 is a graph comparing transmittances according to a number oftimes of dipping of a dampproof layer according to an embodiment;

FIG. 20 is a graph comparing transmittances according to materials ofthe dampproof layer according to the embodiment; and

FIG. 21 is a graph illustrating a dampproof ratio depending on thematerial of the dampproof layer according to the embodiment.

DETAILED DESCRIPTION

Hereinafter, an embodiment of the present invention will be described indetail with reference to the accompanying drawing so that a personskilled in the art to which the present invention belongs can easilycarry out. However, the present invention may be embodied in manydifferent forms and not limited to the embodiments described herein.

Throughout the specification, when a part is referred to as “including”an element, it means that the part may include other elements as wellwithout excluding the other elements unless specifically statedotherwise. In order to clearly illustrate the present invention in thedrawing, parts which are not related to the description are omitted, andin respect to similar parts throughout the specification, similarreference numbers are added.

In the description of an embodiment, when a part such as a layer, afilm, an area, and a plate are “above” another part, not only a case inwhich the part is “directly above” another part but also a case in whichthere is another part therebetween are included. Conversely, when a partis “directly above” another part, it means that there is no other parttherebetween.

Hereinafter, a light emitting device according to a first embodiment ofthe present invention will be described with reference to FIGS. 1 to 6.

FIG. 1 is a perspective view of a light emitting device according to afirst embodiment, FIG. 2 is a perspective view in which a lighttransmitting layer is removed in the FIG. 1, FIG. 3 is a floor plan viewof the light emitting device of the FIG. 1 in which the lighttransmitting layer is removed, FIG. 4 is a rear view of the lightemitting device of the FIG. 1, FIG. 5 is an A-A side cross-sectionalview of the light emitting device of the FIG. 1 and FIG. 6 is a B-B sidecross-sectional view of the light emitting device of the FIG. 3.

Referring to FIGS. 1 to 6, a light emitting device 100 includes a body110 having a recess 111, a plurality of electrodes 121, 123 and 125disposed in the recess 111, a light emitting chip 131 disposed on atleast one of the plurality of electrodes 121, 123 and 125, a lighttransmitting layer 161 disposed on the recess 111, and afluororesin-based dampproof layer 171 covering a surface of the lightemitting chip 131. The light emitting chip 131 may emit a UV-Cwavelength, which is an ultraviolet wavelength ranging from 100 nm to280 nm. The wavelength of the light emitting chip 131 is not limitedthereto, and the light emitting chip 131 may emit at least onewavelength of visible light or infrared light.

The body 110 includes an insulating material such as a ceramic material.The ceramic material includes a low temperature co-fired ceramic (LTCC)or a high temperature co-fired ceramic (HTCC) which is co-fired at thesame time. The material of the body 110 may be AlN, and may be formed ofa metal nitride having a thermal conductivity of 140 W/mK or more.

As shown in FIGS. 5 to 6, a connection pattern 117 may be disposed inthe body 110, and the connection pattern 117 may provide an electricalconnection path between the recess 111 and a lower surface of the body110.

An upper periphery of the body 110 includes a stepped structure 115. Thestepped structure 115 is disposed at an upper periphery of the recess111 as an area which is lower than an upper surface of the body 110. Thedepth of the stepped structure 115 is a depth from the upper surface ofthe body 110 and it may be formed deeper than the thickness of the lighttransmitting layer 161, but it is not limited thereto.

The recess 111 is a region where a part of the upper portion of the body110 is opened and it may be formed of a predetermined depth from theupper surface of the body 110. For example, the recess 111 may be formedin a lower depth than the stepped structure 115 of the body 110. Here, adirection in which the recess 111 is formed may be a direction in whichlight generated from the light emitting chip 131 is emitted.

The recess 111 may have a polygonal shape, a circle shape or anelliptical shape. The recess 111 may have a chamfered shape, forexample, a curved shape. Here, the recess 111 may be located furtherinside than the stepped structure 115 of the body 110.

A width of a lower portion of the recess 111 may be the same as a widthof an upper portion of the recess 111 or the width of the upper portionmay be formed larger. Also, a side wall 116 of the recess 111 may beformed to be vertical or inclined with respect to an extension line of abottom surface of the recess 111.

As shown in FIGS. 2 to 3, a plurality of sub recesses 112 and 113 may bedisposed in the recess 111. A bottom surface of each of the sub recesses112 and 113 may be disposed at a lower depth than the bottom surface ofthe recess 111. A space between the plurality of sub recesses 112 and113 may be greater than the width of the light emitting chip 131. Aprotection device 133 may be disposed on at least one of the pluralityof sub recesses 112 and 113. The depth of each of the sub recesses 112and 113 may be equal to or deeper than the thickness of the protectiondevice 133. The depth of each of the sub recesses 112 and 113 may beformed in a depth such that an upper surface of the protection device133 does not protruded above the bottom surface of the recess 111. Asthe protection device 133 is disposed on at least one of the subrecesses 112 and 113, the protection device 133 does not protrude abovethe bottom surface of the recess 111 and absorption of light emittedfrom the light emitting chip 131 may be reduced, deterioration of thelight extraction efficiency may be prevented, and it is possible toprevent the directivity angle of the light from being distorted.

The plurality of sub recesses 112 and 113 are disposed on opposite sidesbased on the light emitting chip 131. Accordingly, heat generated fromthe light emitting chip 131 may be uniformly distributed in the recess111, and thus the heat resistance of the light emitting device may beimproved. As another example, the protection device 133 may be disposedin a first sub recess 112 of the plurality of sub recesses 112 and 113,and the other second sub recess 113 may be used as a dummy. Theprotection device 133 includes a Zener diode. The protection device 133is connected in parallel to the light emitting chip 131 and electricallyprotects the light emitting chip 131. The first and second sub recesses112 and 113 may not be formed, and in this case, the protection device133 may be removed or disposed at the bottom of the recess 111.

Electrodes 121, 123, 125, 127 and 129 are disposed in the recess 111 andthe sub recesses 112 and 113, and the electrodes 121, 123, 125, 127 and129 selectively supply power to the light emitting chip 131 and theprotection device 133. The electrodes 121, 123, 125, 127 and 129 mayoptionally include a metal such as platinum (Pt), titanium (Ti), copper(Cu), nickel (Ni), gold (Au), tantalum (Ta) and aluminum (Al). At leastone of the electrodes 121, 123, 125, 127 and 129 may be formed as asingle layer or multiple layers. Here, in an electrode of multiplelayers, a gold (Au) material having good bonding may be disposed on atop layer, and a material of titanium (Ti), chromium (Cr) or tantalum(Ta) having good adhesion to the body 110 may be disposed on a lowestlayer, and platinum (Pt), nickel (Ni), copper (Cu) or the like may bedisposed on a middle layer between the top layer and the lowest layer.The present invention is not limited to the laminated structure of suchelectrodes.

Describing the electrodes 121, 123, 125, 127 and 129 specifically, afirst electrode 121 on which the light emitting chip 131 is disposed, asecond electrode 123 and a third electrode 125 spaced apart from thefirst electrode 121, and fourth and fifth electrodes 127 and 129respectively disposed in the sub recesses 112 and 113 are included. Thefirst electrode 121 is disposed at a center of the bottom of the recess111, and the second electrode 123 and the third electrode 125 may bedisposed at both sides of the first electrode 121. Any one of the firstelectrode 121 and the second electrode 123 may be removed, but thepresent invention is not limited thereto. As another example, the lightemitting chip 131 may be disposed on a plurality of electrodes of thefirst to third electrodes 121, 123 and 125, but the present invention isnot limited thereto.

One of the fourth and fifth electrodes 127 and 129, for example, thefourth electrode 127 may be electrically connected to the protectiondevice 133.

Power of a first polarity may be supplied to the second and thirdelectrodes 123 and 125, and power of a second polarity may be suppliedto the first, fourth and fifth electrodes 121, 127 and 129. Polarity ofeach of the electrodes 121, 123, 125, 127 and 129 may vary depending onan electrode pattern or connection method with each device, and is notlimited thereto.

Here, in the case in which the first electrode 121 is not electricallyconnected to the light emitting chip 131, the first electrode 121 may beused as a non-polar metal layer or a heat dissipation plate. Each of theelectrodes 121, 123, 125, 127 and 129 may be defined as a metal layer,but is not limited thereto.

A portion 121A of the first electrode 121 may extend into the body 110and may be electrically connected to another electrode through theconnection pattern 117. The first to fifth electrodes 121, 123, 125, 127and 129 may be selectively connected to the connection pattern 117inside the body 110. For example, the connection pattern 117 connectsthe first electrode 121, the fourth and fifth electrodes 127 and 129 anda first pad 141 each other, and it may connect the second and thirdelectrodes 123 and 125 and a second pad 145 each other, but the presentinvention is not limited thereto.

As shown in FIGS. 4 to 6, a plurality of pads 141 and 145 are disposedon the lower surface of the body 110. The plurality of pads 141 and 145includes a first pad 141 and a second pad 145, and the first and secondpads 141 and 145 may be spaced apart from each other on the lowersurface of the body 110. At least one of the first and second pads 141and 145 may be disposed in a plural, and may disperse a current path,but is not limited thereto.

A radiation member (not shown) may be disposed in the body 110. Theradiation member may be disposed below the light emitting chip 131, thatis, below the first electrode 121, and it may dissipate heat generatedfrom the light emitting chip 131. The material of the radiation membermay be a metal, for example, an alloy.

A light emitting chip 131 may be disposed in the recess 111. The lightemitting chip 131 is a UV LED, and may be an UV LED emitting awavelength in the range of 100 nm to 280 nm. That is, the light emittingchip 131 may emit short wavelength ultraviolet of 280 nm or less. Theultraviolet wavelength has an effect of reducing various biologicalpollutants such as bacteria and viruses.

The light emitting chip 131 may be bonded to the first electrode 121 bya conductive adhesive and may be connected to the second electrode 123by a first connection member 135. The light emitting chip 131 may beelectrically connected to the first electrode 121, the second electrode123 or the third electrode 125. The connection method of the lightemitting chip 131 may be connected by selectively using wire bonding,die bonding, and flip bonding, and such a bonding method may be changeddepending on a chip type and an electrode position of the chip. Theprotection device 133 may be bonded to the fourth electrode 127 and maybe connected to the third electrode 125 by a second connection member137, and it may be electrically connected to the third electrode 125 andthe fourth electrode 127. The first and second connection members 135and 137 include wire for example.

The light emitting chip 131 may be formed of a compound semiconductor ofgroup II and VI elements, or a compound semiconductor of group III and Velements. The light emitting chip 131 may selectively include asemiconductor light emitting device manufactured by using a compoundsemiconductor such as AlInGaN, InGaN, AlGaN, GaN, GaAs, InGaP, AlInGaP,InP, and InGaAs. The light emitting chip 131 may include an n-typesemiconductor layer, a p-type semiconductor layer, and an active layer.The active layer may be implemented as a pair such as InGaN/GaN,InGaN/AlGaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/InAlGaN, AlGaAs/GaAs,InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs.

The dampproof layer 171 is formed on the recess 111, and may have athickness covering an upper surface of the light emitting chip 131. Forexample, the dampproof layer 171 is formed to be thicker than the lightemitting chip 131 to protect the light emitting chip 131 from water ormoisture.

The dampproof layer 171 may include fluorine. The fluorine has a strongchemical bonding force with carbon and does not cause molecular bondbreakage due to ultraviolet. The dampproof layer 171 may be defined as afluororesin-based layer, and a molecular chain of the dampproof layer171 is a helical structure, and the molecular chain structure has athree-dimensional spiral structure, so that fluorine atoms seal around acarbon-carbon bond. The dampproof layer 171 protects the destruction ofmolecular chains due to penetration of ultraviolet or oxygen. Also, thedampproof layer 171 may protect the device by blocking oxygen ormoisture such as water or oil from penetrating to the surface of thedevice as much as possible. The dampproof layer 171 transmits lightemitted from the light emitting chip 131 as a translucent material.

Also, the dampproof layer 171 may be used with at least one of PCTFE(Polychlorotrifluoroethylene), ETFE (Ethylene+Tetrafluoroethylene), FEP(Fluorinated ethylene propylene copolymer), and PFA (Perfluoroalkoxy).In the graph of the transmittance of FIG. 19, the transmittance is highin the order of PCTFE, ETFE, FEP, and PFA in an ultraviolet range, andin the moisture absorption ratio at an ultraviolet wavelength accordingto the dampproof material of FIGS. 20 and 21, PCTFE, FEP, and PFA areshown in that order. Therefore, at least one of PCTFE, FEP, and PFA maybe used as a dampproof layer.

The dampproof layer 171 is attached to the surface of the light emittingchip 131 and may be extended to the bottom surface of the recess 111.The dampproof layer 171 may be extended from the bottom of the recess111 to the side wall 116. The dampproof layer 171 is sealed to top andside surfaces of the light emitting chip 131 and the bottom surface andthe side wall 116 of the recess 111 to protect the light emitting chip131 from water or moisture.

The dampproof layer 171 prevents water from penetrating into theinterface between the light emitting chip 131 and the bottom surface ofthe recess 111.

Also, the dampproof layer 171 seals the plurality of electrodes 121,123, 125, 127 and the protection device 133. This dampproof layer 171may prevent water from penetrating into the protection device 133. Sincethe dampproof layer 171 is effective for dampproofing in the recess 111,so a water resistant light emitting device may be provided.

By using the dampproof layer 171 with a fluororesin material, there isno damage such as bond breaking between molecules due to the ultravioletwavelength emitted from the light emitting chip 131, and a decrease inlight extraction efficiency may be minimized.

Referring to FIG. 5, a thickness of the dampproof layer 171 may be equalto or less than 1 mm, and the thickness may cover at least the lightemitting chip 131, and when it is more than 1 mm, the transmittance ofultraviolet may be reduced. A thickness T1 from the upper surface of thelight emitting chip 131 may be formed, for example, in the range of 0.5μm to 10 μm. When the thickness T1 of the dampproof layer 171 exceedsthe above range, the light transmittance is remarkably decreased, andwhen it is less than the above range, the humidity resistance isreduced.

The dampproof layer 171 according to the embodiment may have atransmittance of 70% to 95% with respect to the wavelength emitted fromthe light emitting chip 131. When the transmittance is less than 70%,the optical reliability may be deteriorated due to a decrease infunction. The dampproof layer 171 may transmit the light withoutdamaging the light emitted from the light emitting chip 131.

In one example of a coating method of the dampproof layer 171, afluororesin-based dampproof layer of liquid melting fluorine in a resinsolvent is coated. Table 1 is a table for measuring the transmittanceaccording to a fluorine content. The content of fluorine dissolved inthe resin solvent was tested after being dissolved and coated in therange of 1 to 3 wt %. As follows, when the fluorine content is 1 wt %,the average transmittance after curing is 94.5%, and in the case of 2 wt%, the average transmittance after curing is 90.4%, and in the case of 3wt %, the average transmittance after curing is 82.9%.

TABLE 1 Fluorine content Transmittance Sample number (wt %) (%) #1 1 wt% 94.3% #2 94.0% #3 95.2% #4 2 wt % 85.3% #5 91.8% #6 94.2% #7 3 wt %81.5% #8 83.6% #9 95.2%

It may be seen that the transmittance is decreased as the content offluorine is increased. The fluorine content in the dampproof layer 171according to the embodiment may be smaller after curing, but is notlimited thereto.

Also, the transmittance may be changed according to the number of layersto be coated, that is, the number of times of dipping. For example, asthe number of times of dipping increases, the transmittance may bereduced. When the transmittance is 100% in the case in which thedampproof layer 171 is not formed on the light emitting chip 131, thetransmittance after dipping once is 90.60%, the transmittance afterdipping twice is 89.22%, the transmittance after dipping three times is79.97%, the transmittance after dipping four times is 75.86%, and thetransmittance after dipping five times is 72.13%. Also, it may be seenthat as the number of times of dipping increases, the thickness isincreased and the transmittance is decreased. The embodiment may providea structure in which the dampproof layer 171 has a thickness of 10 μm orless from the top surface of the light emitting chip 131 for thetransmittance and moisture resistance.

As shown in FIGS. 1, 5 and 6, a light transmitting layer 161 is disposedon the recess 111. The light transmitting layer 161 includes a glassmaterial such as quartz glass. Accordingly, the light transmitting layer161 may be defined as a material capable of transmitting light emittedfrom the light emitting chip 131 without damaging such as bond breakagebetween molecules due to the ultraviolet wavelength.

An outer periphery of the light transmitting layer 161 is coupled to thestepped structure of the body 110. An adhesive layer 163 is disposedbetween the light transmitting layer 161 and the stepped structure 115of the body 110, and the adhesive layer 163 includes a resin materialsuch as silicone or epoxy. The light transmitting layer 161 may have awidth wider than the width of the recess 111. A lower surface area ofthe light transmitting layer 161 may be larger than a bottom surfacearea of the recess 111. Accordingly, the light transmitting layer 161may be easily coupled to the stepped structure 115 of the body 110.

The light transmitting layer 161 may be spaced apart from the lightemitting chip 131. Since the light transmitting layer 161 is spacedapart from the light emitting chip 131, heat expansion caused by thelight emitting chip 131 may be reduced. A region between the lighttransmitting layer 161 and the dampproof layer 171 may be an empty spaceor may be filled with a nonmetal or a metal chemical element, but thepresent invention is not limited thereto. A lens may be coupled onto thelight transmitting layer 161 but the present invention is not limitedthereto. Further, a molding member is further disposed on the sidesurface of the body 110, and may perform dampproofing and deviceprotection.

FIG. 7 is a side cross-sectional view of a light emitting deviceaccording to a second embodiment.

Referring to FIG. 7, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123, and 125 disposed in the recess 111, a lightemitting chip 131 disposed on at least one of the plurality ofelectrodes 121, 123, 125, a light transmitting layer 161 disposed on therecess 111, and a fluororesin-based dampproof layer 172 disposed on thelight transmitting layer 161 and an upper surface of the body 110.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,a wavelength in the range of 100 nm to 280 nm. The light transmittinglayer 161 may be formed of a transparent material, such as glass, whichis free from damage due to the ultraviolet wavelength. The dampprooflayer 172 is extended from an upper surface of the light transmittinglayer 161 to the upper surface of the body 110. The dampproof layer 172has a fluororesin-based material, and may transmit light withoutbreaking bonds between molecules by the light emitted from the lightemitting chip 131.

The dampproof layer 172 covers the upper surface of the body 110 and theupper surface of the light transmitting layer 161 to block water ormoisture penetrating the upper surface of the body 110. The dampprooflayer 172 may be in contact with an adhesive layer 163 bonded to thelight transmitting layer 161 and a stepped structure 115 of the body110.

The dampproof layer 172 may be formed to have a thickness ranging from0.5 μm to 10 μm, and the thickness may vary depending on the number ofdips of the dampproof layer 172, but it may be a thickness range thatthe transmittance is 70% or more. When the thickness of the dampprooflayer 172 exceeds the above mentioned range, the light transmittance isremarkably decreased, and when the thickness is less than the aboverange, moisture resistance is deteriorated. The dampproof layer 172 maybe extended from the upper surface of the body 110 to a side surfaceportion of the body 110, but the present invention is not limitedthereto. By further extending the dampproof layer 172 to a part of theside surface of the body 110, a water- or moisture-blocking effect maybe further increased.

A lens may be coupled onto the dampproof layer 172, but the presentinvention is not limited thereto. Further, a molding member may befurther disposed on the side surface of the body 110 to performdampproofing and device protection.

FIG. 8 is a side cross-sectional view of a light emitting deviceaccording to a third embodiment.

Referring to FIG. 8, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123, and 125 disposed in the recess 111, a lightemitting chip 131 disposed on at least one of the plurality ofelectrodes 121, 123 and 125, a light transmitting layer 161 disposed onthe recess 111, and a fluororesin-based dampproof layer 174 disposed onan upper surface of the light transmitting layer 161 and upper and sidesurfaces of the body 110.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,a wavelength in the range of 100 nm to 280 nm. The light transmittinglayer 161 may be formed of a glass material having no damage, such asbonding failure between molecules due to the ultraviolet wavelength. Thedampproof layer 174 is extended from the upper surface of the lighttransmitting layer 161 to the upper surface of the body 110. Thedampproof layer 174 has a fluororesin-based material and may transmitlight without being broken by the light emitted from the light emittingchip 131.

The dampproof layer 174 may be extended from the upper surface of thelight transmitting layer 161 to the upper surface and the side surfaceof the body 110 for dampproofing. The dampproof layer 174 is disposed onthe entire upper surface area of the light transmitting layer 161, theentire upper surface area of the body 110, and the entire side surfacearea of the body 110, and water or moisture may be prevented frompermeating through the body 110 and other components. A thickness of thedampproof layer 174 may be in the range of 0.5 μm to 10 μm, when thethickness of the dampproof layer 174 exceeds the above mentioned range,the light transmittance is remarkably decreased, and when the thicknessis less than the above range, moisture resistance is deteriorated. Thedampproof layer 174 may be extended on a lower surface of the body 110,and in this case, it may be formed on an area except the first andsecond pads 141 and 145. Accordingly, water or moisture penetrating intothe lower surface of the body 110 may be blocked.

A lens may be coupled onto the dampproof layer 174, but the presentinvention is not limited thereto. Further, a molding member may befurther disposed on an outer side part of the dampproof layer 174, andit may perform dampproofing and device protection.

FIG. 9 is a side cross-sectional view of a light emitting deviceaccording to a fourth embodiment.

Referring to FIG. 9, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123, and 125 disposed in the recess 111, a lightemitting chip 131 disposed on at least one of the plurality ofelectrodes 121, 123 and 125, a first dampproof layer 171A sealing thelight emitting chip 131 on the recess 111, a light transmitting layer161 disposed on the recess 111, and a second dampproof layer 174Adisposed on an upper surface of the light transmitting layer 161 andupper and side surfaces of the body 110.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,a wavelength in the range of 100 nm to 280 nm. The light transmittinglayer 161 may be formed of a glass material having no damage due to theultraviolet wavelength. The first and second dampproof layers 171A and174A have fluororesin-based materials and may transmit light withoutbeing broken by the light emitted from the light emitting chip 131.

The first dampproof layer 171A may be adhered and extended to a bottomof the recess 111 from a surface of the light emitting chip 131 in therecess 111. The first dampproof layer 171A blocks water or moisturepenetrating into the light emitting chip 131 in the recess 111. Thefirst dampproof layer 171A may be extended and contacted to a side wallof the recess 111, but is not limited thereto. The distance between anupper surface of the first dampproof layer 171A and an upper surface ofthe light emitting chip 131 may be equal to or less than 10 μm and thedistance between the bottom of the recess 111 and the upper surface ofthe first dampproof layer 171A may be equal to or less than 1 mm. Whenthe first dampproof layer 171A exceeds 10 μm from the upper surface ofthe light emitting chip 131, light transmittance or moisture barrierrate may be significantly lowered, and when the distance between thebottom of the recess 111 and the upper surface of the first dampprooflayer 171A is more than 1 mm, the light transmittance may be remarkablylowered.

The second dampproof layer 174A may be extended from the upper surfaceof the light transmitting layer 161 to the upper surface of the body 110or may be extended from the upper surface of the light transmittinglayer 161 to the upper surface and the side surface of the body 110.Also, the second dampproof layer 174A may be extended to a lower surfaceof the body 110 and may block water or moisture penetrating through thelower surface of the body 110. The second dampproof layer 174A mayprevent water or moisture from penetrating through the surface of thebody 110. The second dampproof layer 174A may have a thickness of 10 μmor less, and when the thickness is more than 10 μm, the lighttransmittance and the moisture barrier rate may be decreased.

The material of the first and second dampproof layers 171A and 174A maybe used with at least one of PCTFE (Polychlorotrifluoroethylene), ETFE(Ethylene+Tetrafluoroethylene), FEP (Fluorinated ethylene propylenecopolymer) and PFA (Perfluoroalkoxy). The first and second dampprooflayers 171A and 174A may include the same material or differentmaterials. For example, the first and second dampproof layers 171A and174A may be formed of PCTFE, or the first dampproof layers 171A may beformed of PCTFE and the second dampproof layer 174A may be formed ofETFE, different from the material of the first dampproof layer.Alternatively, the first dampproof layer 171A may be formed of amaterial having a higher water or moisture blocking rate (hereinafter,abbreviated as dampproof ratio) than the second dampproof layer 174A andmay protect the light emitting chip 131. On the contrary, the seconddampproof layer 174A is formed of a material having a higher dampproofratio than the first dampproof layer 171A, so that the dampproof ratiomay be increased primarily on the surface of the light emitting device.The first dampproof layer 171A may be formed of a material having ahigher transmittance than the second dampproof layer 174A, and adecrease in transmittance may be reduced. The embodiment may beeffective for dampproofing by performing double dampproofing through thefirst and second dampproof layers 171A and 174A.

A lens may be coupled onto the second dampproof layer 174A, but thepresent invention is not limited thereto. Further, a molding member maybe further disposed on an outer side part of the second dampproof layer174A, and may perform dampproofing proof and device protection.

FIG. 10 is a side cross-sectional view of a light emitting deviceaccording to a fifth embodiment.

Referring to FIG. 10, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123, and 125 disposed in the recess 111, a lightemitting chip 131 disposed on at least one of the plurality ofelectrodes 121, 123 and 125, a first dampproof layer 171A sealing thelight emitting chip 131 on the recess 111, a light transmitting layer161 disposed on the recess 111, a second dampproof layer 173 disposed onan upper surface outer periphery of the light transmitting layer 161 andupper and side surfaces of the body 110.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,a wavelength in the range of 100 nm to 280 nm. The light transmittinglayer 161 may be formed of a glass material having no damage due to theultraviolet wavelength. The first and second dampproof layers 171A and173 have fluororesin-based materials and may transmit light withoutbeing broken by the light emitted from the light emitting chip 131.

The first dampproof layer 171A may be extended to a bottom of the recess111 from a surface of the light emitting chip 131 in the recess 111. Thefirst dampproof layer 171A blocks water or moisture penetrating into thelight emitting chip 131 in the recess 111. The first dampproof layer171A may be contacted to a side wall of the recess 111, but is notlimited thereto. The distance between an upper surface of the firstdampproof layer 171A and an upper surface of the light emitting chip 131may be equal to or less than 10 μm, and when the distance exceeds 10 μm,light transmittance and moisture barrier rate may be lowered. The seconddampproof layer 173 may be extended from the outer periphery of theupper surface of the light transmitting layer 161 to the upper surfaceof the body 110 or may be extended from the outer periphery of the uppersurface of the light transmitting layer 161 to the upper surface and theside surface of outer side of the body 110, and it may block water ormoisture. Also, the second dampproof layer 173 may be extended to alower surface of the body 110 and may block water or moisturepenetrating through the lower surface of the body 110.

The second dampproof layer 173 has an open region 173B and the uppersurface of the light transmitting layer 161 may be exposed through theopen region 173B. The second dampproof layer 173 may be disposed so asnot to overlap a bottom region of the recess 111 in a verticaldirection. A width D2 of the open region 173B of the second dampprooflayer 173 may be wider than or equal to a bottom width D1 of the recess111. By disposing the open area 173B in the second dampproof layer 173,the interference with the light emitted from the light emitting chip 131is minimized and the light extraction efficiency may be improved.

The second dampproof layer 173 may prevent water or moisture frompenetrating through the surface of the body 110. A thickness of thesecond dampproof layer 173 may be about 0.5 μm to 10 μm. When thethickness of the second dampproof layer 173 exceeds the above range, thelight transmittance is remarkably decreased, and when the thickness isless than the above range, moisture resistance may be deteriorated.

A lens may be coupled onto the second dampproof layer 173, but thepresent invention is not limited thereto.

The material of the first and second dampproof layers 171A and 173 maybe used with at least one of PCTFE (Polychlorotrifluoroethylene), ETFE(Ethylene+Tetrafluoroethylene), FEP (Fluorinated ethylene propylenecopolymer) and PFA (Perfluoroalkoxy). The first and second dampprooflayers 171A and 173 may include the same material or differentmaterials. For example, the first and second dampproof layers 171A and173 may be formed of PCTFE, or the first dampproof layer 171A may beformed of PCTFE and the second dampproof layer 173 may be formed of ETFEdifferent from the material of the first dampproof layer 171A.

In addition, the first dampproof layer 171A may be formed of a materialhaving a higher dampproof ratio than the second dampproof layer 173 toprotect the light emitting chip 131, or the second dampproof layer 173is formed of a material having a higher dampproof ratio than the firstdampproof layer 171A, and may increase the primary dampproof ratio onthe surface of the light emitting device. The first dampproof layer 171Amay be formed of a material having a higher transmittance than thesecond dampproof layer 173 among the materials, thereby reducing adecrease in transmittance. Further, a molding member is further disposedon an outer side part of the second dampproof layer 173, and may performdampproofing and device protection.

FIG. 11 is a side cross-sectional view of a light emitting deviceaccording to a sixth embodiment.

Referring to FIG. 11, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121A and 125A disposed in the recess 111, a light emittingchip 131A disposed on at least one of the plurality of electrodes 121Aand 125A, a first dampproof layer 171A covering a surface of the lightemitting chip 131A and a light transmitting layer 161 disposed on thefirst dampproof layer 171A.

The light emitting chip 131A may emit an ultraviolet wavelength, thatis, a wavelength in the range of 100 nm to 280 nm. The light emittingchip 131A is arranged on the plurality of electrodes 121A and 125A in aflip chip manner. Since the light emitting chip 131A is disposed in aflip chip manner, it is not necessary to dispose a separate connectionmember, so water or moisture through the connection member connected tothe light emitting chip 131A may be blocked, and defect of theconnection member may be prevented.

The light emitting chip 131A according to the embodiment may be disposedin the recess 111 in a flip chip manner and the first dampproof layer171A may be disposed in the recess 111. As another example, thestructure of the first dampproof layer 171A may selectively adopt theembodiments described above, but the present invention is not limitedthereto.

Also, a second dampproof layer 176 may be disposed on a lower surface ofthe body 110. The second dampproof layer 176 may be disposed on thelower surface of the body 110 and may be in contact with the first andsecond pads 141 and 145 as a fluororesin-based dampproof layer. Thesecond dampproof layer 176 is disposed on the lower surface of the body110 and may block the penetration of water or moisture through the firstand second pads 141 and 145. The second dampproof layer 176 may beextended from the lower surface of the body 110 to a side surfaceportion, and it may prevent penetration of water or moisture. Further, amolding member is further disposed on an outer side part of the body 110and may perform moisture proof and device protection.

FIG. 12 is a side cross-sectional view of a light emitting deviceaccording to a seventh embodiment.

Referring to FIG. 12, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121A and 125A disposed in the recess 111, a light emittingchip 131A disposed on the plurality of electrodes 121A and 125A, a firstdampproof layer 171B covering a surface of the light emitting chip 131Aand a light transmitting layer 161 disposed on the first dampproof layer171B.

The light emitting chip 131A may emit an ultraviolet wavelength, thatis, a wavelength in the range of 100 nm to 280 nm. The light emittingchip 131A is disposed on the plurality of electrodes 121A and 125A, forexample, in a flip chip manner. Since the light emitting chip 131A isdisposed in a flip chip manner, it is not necessary to dispose aseparate connection member, so water or moisture through the connectionmember connected to the light emitting chip 131A may be prevented, anddefect of the connection member may be prevented.

The light emitting device according to the embodiment may be disposed inthe recess 111 in a flip chip manner and the first dampproof layer 171Bmay be disposed in the recess 111. The dampproof layer 171B may beextended from upper surfaces of the first and second electrodes 121A and125A to an upper surface of the light emitting chip 131A in a steppedstructure. Accordingly, the dampproof layer 171B may provide a uniformdampproof effect in the region of the recess 111. Further, a moldingmember may be further disposed on an outer side of the body 110 toperform dampproofing and device protection. A thickness of an uppersurface of the dampproof layer 171B from the upper surface of the lightemitting chip 131A may be, for example, in the range of 0.5 μm to 10 μm.When the thickness of the dampproof layer 171B exceeds the abovementioned range, light transmittance is remarkably decreased. When thethickness of the dampproof layer 171B is less than the above range,moisture resistance may be deteriorated. In the embodiment, the lightemitting device is described as being disposed in the recess 111 in aflip chip manner, but the present invention is not limited thereto. Thelight emitting device may be disposed in the recess in a horizontal orvertical manner.

FIG. 13 is a side cross-sectional view of a light emitting deviceaccording to an eighth embodiment.

Referring to FIG. 13, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121A and 125A disposed in the recess 111, a light emittingchip 131A disposed on the plurality of electrodes 121A and 125A, a lighttransmitting layer 161 disposed on the recess 111, and a dampproof layer171C disposed on a lower surface of the light transmitting layer 161.

The dampproof layer 171C may be disposed on the lower surface of thelight transmitting layer 161, and the outer peripheries thereof may beadhered to an adhesive 163. Thus, the step of forming the dampprooflayer 171C in a separate area is simplified, and the dampproof layer171C is formed on the lower surface of the light transmitting layer 161,so that the dampproof layer 171C may be disposed in the coupling step ofthe light transmitting layer 161. Further, the outer side part of thedampproof layer 171C is vertically overlapped with a stepped structure115, so that water or moisture penetration through the stepped structure115 may be prevented.

The light emitting chip 131A may emit an ultraviolet wavelength, thatis, a wavelength in the range of 100 nm to 280 nm. The light emittingchip 131A may be disposed on the electrodes 121A and 125A in a flip chipmanner or may be connected to the connection member described above.However, the present invention is not limited thereto. A thickness ofthe dampproof layer 171C may be in the range of 0.5 μm to 10 μm, whenthe thickness of the dampproof layer 171C exceeds the above range, lighttransmittance is remarkably decreased, and when less than the aboverange, moisture resistance is reduced.

FIG. 14 is a side cross-sectional view of a light emitting deviceaccording to a ninth embodiment.

Referring to FIG. 14, the light emitting device according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121A and 125A disposed in the recess 111, a light emittingchip 131A disposed on the plurality of electrodes 121A and 125A, and adampproof layer 171A covering a surface of the light emitting chip 131A.

A side wall 116 of the recess 111 may be extended in a verticaldirection from an upper surface of the body 110, thereby simplifying themanufacturing process. Further, by removing a light transmitting layerin the recess 111, light loss due to the light transmitting layer may bereduced.

The light emitting chip 131A may emit an ultraviolet wavelength, thatis, a wavelength in the range of 100 nm to 280 nm. The light emittingchip 131A may be disposed on the electrodes 121A and 125A in a flip chipmanner. An upper surface of the dampproof layer 171A may be formed in aflat surface or a stepped structure as shown in FIG. 12. A thickness ofthe dampproof layer 171A may be less than or equal to 1 mm, and thethickness may cover at least the light emitting chip 131A, and when itexceeds 1 mm, the transmittance of ultraviolet may be reduced. Athickness from an upper surface of the light emitting chip 131A may beformed, for example, in the range of 0.5 μm to 10 μm. When the thicknessof the dampproof layer 171A exceeds the above mentioned range, lighttransmittance is remarkably decreased, and when the thickness is lessthan the above range, moisture resistance is deteriorated.

FIG. 15 is a side cross-sectional view of a light source moduleaccording to a tenth embodiment.

Referring to FIG. 15, the light source module according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123 and 125 disposed in the recess 111, a light emittingchip 131 disposed on at least one of the plurality of electrodes 121,123 and 125, a light transmitting layer 161 disposed on the recess 111,a circuit board 201 disposed below the body 110, and a dampproof layer175 disposed on an upper surface of the light transmitting layer 161, anupper surface and a side surface of the body 110, and an upper surfaceof the circuit board 201.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,an ultraviolet wavelength in the range of 100 nm to 280 nm. The lightemitting chip 131 may be arranged in a flip chip manner or by diebonding. The light transmitting layer 161 may be formed of a glassmaterial having no damage, such as bonding failure between molecules dueto the ultraviolet wavelength. The dampproof layer 175 has afluororesin-based material, and may transmit light without being brokenby the light emitted from the light emitting chip 131. The dampprooflayer 175 may be extended from the upper surface of the lighttransmitting layer 161 to the upper surface of the body 110 and theupper surface of the circuit board 201. The dampproof layer 175 mayblock water or moisture penetrating through the side surface and theupper surface of the body 110, as well as water or moisture penetratingthe circuit board 201. A thickness of the dampproof layer 175 may be inthe range of 0.5 μm to 10 μm, and when the thickness of the dampprooflayer 175 is more than the above range, light transmittance isremarkably decreased, and when less than the above range, moistureresistance is reduced.

A portion 175A of the dampproof layer 175 may be disposed in a regionbetween a lower surface of the body 110 and the circuit board 201, andmay block water or moisture penetration.

The circuit board 201 includes a plurality of bonding pads 204 and 205and the plurality of bonding pads 204 and 205 may be electricallyconnected to first and second pads 141 and 145 disposed on the lowersurface of the body 110.

The circuit board 201 may be connected to signal cables 211 and 213through external connection terminals 207 and 208, and the signal cables211 and 213 may supply power from the outside. The dampproof layer 175covers the bonding portions of the external connection terminals 207 and208 and the signal cables 211 and 213, and it may prevent water ormoisture penetration.

The plurality of the signal cables 211 and 213 are spaced apart fromeach other and may be drawn out through the dampproof layer 175.

FIG. 16 is a side cross-sectional view of a light source moduleaccording to an eleventh embodiment.

Referring to FIG. 16, the light source module according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123 and 125 disposed in the recess 111, a light emittingchip 131 disposed on at least one of the plurality of electrodes 121,123 and 125, a light transmitting layer 161 disposed on the recess 111,a circuit board 201 disposed below the body 110, a dampproof layer 177extended from an upper surface of the light transmitting layer 161 to anupper surface of the body 110, and a molding member 181 covering thebody 110 and a surface of the circuit board 201.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,a wavelength in the range of 100 nm to 280 nm. The light transmittinglayer 161 may be formed of a glass material having no damage due to theultraviolet wavelength. The dampproof layer 177 may be extended from theupper surface of the light transmitting layer 161 to the upper surfaceof the body 110 to block water or moisture penetrating into the body110. The dampproof layer 177 has a fluororesin-based material, and maytransmit light without causing bonding destruction between molecules bythe light emitted from the light emitting chip 131.

The dampproof layer 177 may be provided in the form of a film, and anadhesive layer 164 is bonded between the dampproof layer 177 and theupper surface of the body 110. The adhesive layer 164 may be an adhesivefor ultraviolet. An outer frame portion 177A of the dampproof layer 177may protrude further outward than a side surface of the body 110, sothat coupling force with the molding member 181 may be increased. Wateror moisture may be double-blocked by the molding member 181 and thedampproof layer 177.

Since the dampproof layer 177 is provided in a film form, it is bondedto the upper surfaces of the body 110 and the light transmitting layer161 and may be provided with a thickness of 1 mm or less, for example, athickness ranging from 0.025 mm to 1 mm. Since a coating layer accordingto dipping is not formed on the dampproof layer 177 in a film form, thetransmittance may be maintained at 70% or more even if it is providedthicker than the dipping process. In the case in which the dampprooflayer 177 is thicker than 1 mm, light extraction efficiency may belowered, and in the case in which the thickness is less than 0.025 mm,transmittance is improved, but a work process becomes difficult due towarping or wrinkling.

The circuit board 201 is disposed below the body 110 and is electricallyconnected to the light emitting chip 131 in the body 110. The circuitboard 201 may include a connector 210 and the connector 210 is connectedto signal cables 211 and 213 supplying power.

The molding member 181 is molded on the side surface of the body 110 andthe surface of the circuit board 201.

The molding member 181 has an open region 182 and the open region 182exposes the dampproof layer 177. An upper portion 181A of the moldingmember 181 may be adhered to the outer frame portion 177A of thedampproof layer 177 and a lower portion 181B may cover a lower surfaceof the circuit board 201. A width D3 of the open region 182 may be equalto or wider than a width of the light transmitting layer 161. Byproviding the open region 182, light loss due to the contact interfacebetween the molding member 181 and the dampproof layer 177 may bereduced.

The molding member 181 may be formed of a resin material such assilicone, epoxy, or urethane. An upper surface of the molding member 181may be disposed at a higher position than the upper surface of the body110 and may be in close contact with an upper surface of the dampprooflayer 177. Accordingly, the dampproof layer 177 may prevent water ormoisture from penetrating into the body 110.

The molding member 181 molds the connector 210 and the signal cables 211and 213 to expose a part of the signal cables 211 and 213. Accordingly,by dampproofing with the dampproof layer 177 and by molding the surfacesof the circuit board 201, the connector 210 and the signal cables 211and 213 with the molding member 181, it is possible to prevent water ormoisture from penetrating through the interface between the circuitboard 201 and the body 110. As another example, a dampproof layer may bedisposed in the recess 111 of the body 110, but the present invention isnot limited thereto.

FIG. 17 is a side cross-sectional view of a light source moduleaccording to a twelfth embodiment.

Referring to FIG. 17, the light source module according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123 and 125 disposed in the recess 111, a light emittingchip 131 disposed on at least one of the plurality of electrodes 121,123 and 125, a light transmitting layer 161 disposed on the recess 111,a circuit board 201 disposed below the body 110, a dampproof layer 178extended from an upper surface of the light transmitting layer 161 to anupper surface and a side surface of the body 110 and an upper surface ofthe circuit board 201 and a molding member 183 extended from a lowersurface of the circuit board 201 to an outer side surface of thedampproof layer 178.

The light emitting chip 131 may emit an ultraviolet wavelength, that is,a wavelength in the range of 100 nm to 280 nm. The light transmittinglayer 161 may be formed of a glass material having no damage due to theultraviolet wavelength. The dampproof layer 178 has a fluororesin-basedmaterial and may transmit light without being broken by the lightemitted from the light emitting chip 131. The dampproof layer 178 isextended from the upper surface of the light transmitting layer 161 tothe upper surface and the side surface of the body 110. The dampprooflayer 178 is extended to the upper surface of the circuit board 201. Aportion of the dampproof layer 178 is disposed between a lower surfaceof the body 110 and the circuit board 201 to block water or moisturepenetrating the lower surface of the body 110. A thickness of thedampproof layer 178 may be in the range of 0.5 μm to 10 μm, and when thethickness of the dampproof layer 178 exceeds the above range, lighttransmittance is remarkably decreased, and when less than the aboverange, moisture resistance is reduced.

A part of signal cables 211 and 213 connected to the circuit board 201is coated with the dampproof layer 178.

The molding member 183 is molded on the outer side part of the dampprooflayer 178 and the surface of the circuit board 201. The molding member183 is molded on the outer side part of the dampproof layer 178 disposedon the side surface of the body 110 to double-protect the side surfaceof the body 110.

The molding member 183 has an open region, and the open region exposesan upper surface of the dampproof layer 178. The molding member 183 maybe formed of a resin material such as silicone, epoxy, or urethane. Anupper surface of the molding member 183 may be disposed higher than theupper surface of the body 110 and may be the same horizontal surfacewith the upper surface of the dampproof layer 178. Thus, the surfaceshape of the light emitting device is flattened, and water or moisturemay be prevented from being collected in a non-flat region.

The molding member 183 molds a part of the signal cables 211 and 213 andexposes a part of the signal cables 211 and 213. Accordingly, bydampproofing with the dampproof layer 178 and by molding the surfaces ofthe outer side part of the dampproof layer 178, the circuit board 201,and the signal cables 211 and 213 with the molding member 183, it ispossible to prevent water or moisture from penetrating through theinterface between the circuit board 201 and the body 110. As anotherexample, a dampproof layer may be disposed in the recess 111 of the body110, but the present invention is not limited thereto.

FIG. 18 is a side cross-sectional view of a light source moduleaccording to a thirteenth embodiment.

Referring to FIG. 18, the light source module according to theembodiment includes a body 110 having a recess 111, a plurality ofelectrodes 121, 123 and 125 disposed in the recess 111, a light emittingchip 131 disposed on at least one of the plurality of electrodes 121,123 and 125, a light transmitting layer 161 disposed on the recess 111,a circuit board 201 disposed below the body 110, a dampproof layer 178extended from an upper surface of the light transmitting layer 161 to anupper surface and a side surface of the body 110 and an upper surface ofthe circuit board 201, a molding member 183 extended from a lowersurface of the circuit board 201 to an outer side part of the dampprooflayer 178, and a case 221 on a surface of the molding member 183. Amongthese configurations, the same parts as those of FIG. 17 will bedescribed with reference to FIG. 17.

The case 221 covers a side surface and a lower surface of the moldingmember 183. That is, the light source module of FIG. 17 is inserted intoa housing part of the case 221. The case 221 may be coupled with a cover223 having an open region. The open region of the cover 223 may beopened in a region corresponding to the recess 111. The cover 223 coversthe upper surface of the molding member 183. The case 221 and the cover223 may be formed of a plastic material, but are not limited thereto.

The cover 223 may be bonded or fastened to the case 221. The case 221and the cover 223 protect the entire module from an external impact. Inaddition, the case 221 may prevent water or moisture from penetratingthrough a lower portion.

The light emitting device and the light source module including the sameaccording to the embodiment may be used as a device for sterilizing anindoor unit, an evaporator and condensed water of a refrigerator, and asterilizing device in an appliance such as a air washer, and asterilizing device for a water reservoir and discharge water of a waterpurifier, and a sterilizing device in a toilet. Such a sterilizingdevice may optionally include the above-described dampproof layer.

The features, structures, effects and the like described in theembodiments are included in at least one embodiment of the presentinvention and are not necessarily limited to only one embodiment.Furthermore, the features, structures, effects and the like illustratedin the embodiments may be combined or modified by other persons skilledin the art to which the embodiments belong. Accordingly, it is to beunderstood that such combination and modification are included in thescope of the present invention.

INDUSTRIAL APPLICABILITY

The light emitting device of the embodiment may improve the reliabilityof dampproofing.

The light emitting device of the embodiment may be applied to asterilizing apparatus.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. An ultraviolet light emitting device comprising:a body having a recess; a light emitting diode chip disposed in therecess, wherein the light emitting diode chip is to emit light having awavelength in a range of 100 nm to 280 nm, the light emitting diode chiphaving at least a side surface and a top surface; a light transmittingmember disposed on the body, the light transmitting member having abottom surface, the light transmitting member is to transmit the lighthaving the wavelength in the range of 100 nm to 280 nm; a resin layerdisposed in the recess, wherein the resin layer is to contact the topsurface and side surfaces of the light emitting diode chip; wherein aninner portion of the light transmitting member covers the recess of thebody, wherein an outer portion of the light transmitting member isattached to the body, wherein both the resin layer and the lightemitting diode chip are spaced apart from the bottom surface of thelight transmitting member by an empty space, wherein the resin layerincludes a portion that is not vertically overlapped with the lightemitting diode chip, wherein the portion of the resin layer contacts abottom surface of the recess and extends between the side surfaces ofthe light emitting diode chip and an inner side surface of the recess,wherein the light transmitting member is spaced apart from the lightemitting diode chip by a first vertical distance which is from thebottom surface of the light transmitting member to the top surface ofthe light emitting diode chip, wherein the light transmitting member isspaced apart from the portion of the resin layer by a second verticaldistance which is from the bottom surface of the light transmittingmember to a top surface of the portion of the resin layer, wherein amaximum distance of the second vertical distance is greater than amaximum distance of the first vertical distance, wherein the resin layerand the light transmitting member are formed of different materialsthrough which the wavelength in the range of 100 nm to 280 nm istransmitted, wherein the bottom surface of the light transmitting memberis non-contact from an entire top surface of the resin layer by theempty space, wherein the empty space includes a first empty space thatis vertically overlapped with the light emitting diode chip and a secondempty space that is vertically overlapped with the portion of the resinlayer, and a first thickness of the first empty space is different thana second thickness of the second empty space, wherein the firstthickness is a vertical distance from the bottom surface of the lighttransmitting member to a bottom surface of the first empty space, andthe second thickness is a vertical distance from the bottom surface ofthe light transmitting member to a bottom surface of the second emptyspace, wherein a distance between the top surface of the light emittingdiode chip and a top surface of the resin laver, directly above thelight emitting diode chip and vertically overlapped with the lightemitting diode chip, of the resin layer is in a range of 0.5 um-10 um; asecond resin layer disposed on an upper surface of the lighttransmitting member and an upper surface of the body.
 2. The ultravioletlight emitting device of claim 1, wherein the second thickness of thesecond empty space is greater than the first thickness of the firstempty space.
 3. The ultraviolet light emitting device of claim 1,wherein the resin layer includes a fluororesin-based material.
 4. Theultraviolet light emitting device of claim 1, wherein another portion ofthe resin layer is between the top surface of the light emitting diodechip and the bottom surface of the light transmitting member.
 5. Theultraviolet light emitting device of claim 4, wherein the resin layerhas a transmittance of 70% or more with respect to the light emittedfrom the light emitting diode chip.
 6. The ultraviolet light emittingdevice of claim 1, comprising a plurality of electrodes included in therecess, a plurality of pads on a lower surface of the body, and aplurality of connection patterns in the body, the connection patterns toelectrically connect the electrodes with the pads, wherein the lightemitting diode chip is disposed on at least one of the plurality ofelectrodes, and the light emitting diode chip is electrically connectedto the plurality of electrodes.
 7. The ultraviolet light emitting deviceof claim 6, wherein the light emitting diode chip is disposed in a flipchip manner, and wherein the light emitting diode chip is directlycontacted with the plurality of electrodes.
 8. The ultraviolet lightemitting device of claim 1, wherein the body includes a ceramicmaterial, wherein the light transmitting member includes a glassmaterial, and wherein the outer portion of the light transmitting memberis vertically overlapped with the body that is disposed outside theresin layer.
 9. The ultraviolet light emitting device of claim 1,wherein an adhesive layer is between the outer portion of the lighttransmitting member and the body, wherein the empty space is between theadhesive layer and the resin layer.
 10. The ultraviolet light emittingdevice of claim 1, wherein a thickness of the portion of the resin layeris 1 mm or less.
 11. An ultraviolet light emitting device comprising: abody having a recess, wherein an upper periphery of the recess includesa stepped structure lower than an upper surface of the body; a lightemitting chip disposed in the recess, wherein the light emitting chip isto emit light having a wavelength in a range of 100 nm to 280 nm, thelight emitting chip having side surfaces and a top surface; a lighttransmitting member attached to the body, the light transmitting memberto cover the recess, and the light transmitting member having a bottomsurface; a resin disposed in the recess between sides of the body andsides of the light emitting chip, and contacting the top surface of thelight emitting chip; and an empty space having both a first empty spaceand a second empty space between the light transmitting member and theresin, the first empty space being an area of the empty space that isvertically overlapped with the light emitting chip, and the second emptyspace being remaining area of the empty space other than the first emptyspace, wherein the first empty space has a first thickness and thesecond empty space has a second thickness, and a maximum value of thesecond thickness is different than a maximum value of the firstthickness, wherein the resin has a transmittance of 70% or more withrespect to the wavelength in the range of 100 nm to 280 nm emitted fromthe light emitting diode chip, wherein the resin and the lighttransmitting member are formed of different materials through which thewavelength in the range of 100 nm to 280 nm is transmitted, wherein aninner portion of the light transmitting member is vertically overlappedwith the resin, wherein an outer portion of the light transmittingmember is vertically overlapped with the body that is disposed outsidethe empty space, wherein the bottom surface of the light transmittingmember is non-contact from an entire top surface of the resin by theempty space, wherein the first thickness is a vertical distance from thebottom surface of the light transmitting member to a bottom surface ofthe first empty space, and the second thickness is a vertical distancefrom the bottom surface of the light transmitting member to a bottomsurface of the second empty space, wherein a distance between the topsurface of the light emitting chip and a top surface of the resin laver,directly above the light emitting chip and vertically overlapped withthe light emitting chip, of the resin layer is in a range of 0.5 um-10um; a second resin layer disposed on an upper surface of the lighttransmitting member and an upper surface of the body.
 12. Theultraviolet light emitting device of claim 11, wherein the maximum valueof the second thickness is greater than the maximum value of the firstthickness.
 13. The ultraviolet light emitting device of claim 11,wherein a portion of the resin contacts a bottom surface of the recessand extends between a side of the light emitting chip and an inner sidesurface of the recess.
 14. The ultraviolet light emitting device ofclaim 13, wherein the second thickness is from the bottom surface of thelight transmitting member to a top surface of the portion of the resin.15. The ultraviolet light emitting device of claim 13, wherein anotherportion of the resin is disposed in an area between the bottom surfaceof the light transmitting member and the top surface of the lightemitting chip.
 16. The ultraviolet light emitting device of claim 11,comprising a plurality of electrodes included in the recess, a pluralityof pads on a lower surface of the body, and a plurality of connectionpatterns in the body, the connection patterns to electrically connectthe electrodes with the pads, wherein the light emitting chip isdisposed in a flip chip manner, and wherein the light emitting chip isdirectly contacted with the plurality of electrodes.
 17. The ultravioletlight emitting device of claim 11, wherein the light transmitting memberis attached to the body by an adhesive layer, and wherein air isprovided within the empty space, and wherein the empty space is betweenthe adhesive layer and the resin.
 18. The ultraviolet light emittingdevice of claim 11, wherein a thickness of the portion of the resin is 1mm or less.
 19. An ultraviolet light emitting device comprising: a bodyhaving a recess; a light emitting diode chip disposed in the recess,wherein the light emitting diode chip is to emit light having awavelength in a range of 100 nm to 280 nm, the light emitting diode chiphaving at least a side surface and a top surface; a light transmittingmember disposed on the body, the light transmitting member having abottom surface, the light transmitting member is to transmit the lighthaving the wavelength in the range of 100 nm to 280 nm; a first resinlayer disposed in the recess, wherein the first resin layer is tocontact the top surface and side surfaces of the light emitting diodechip; and a second resin layer disposed on an upper surface of the lighttransmitting member and an upper surface of the body, wherein the lighttransmitting member covers the recess of the body, wherein the lighttransmitting member is attached to the body, wherein both the firstresin layer and the light emitting diode chip are spaced apart from thebottom surface of the light transmitting member by an empty space,wherein the first resin layer includes a portion that is not verticallyoverlapped with the light emitting diode chip, wherein the portion ofthe first resin layer contacts a bottom surface of the recess andextends between the side surface of the light emitting diode chip and aninner side surface of the recess, wherein each of the first and secondresin layers has a transmittance of 70% or more with respect to thewavelength in the range of 100 nm to 280 nm emitted from the lightemitting diode chip, wherein the first and second resin layers, and thelight transmitting member are formed of different materials throughwhich the wavelength in the range of 100 nm to 280 nm is transmitted,wherein a thickness of the portion of the first resin layer is 1 mm orless, wherein the first resin layer includes a fluororesin-basedmaterial, wherein an inner portion of the light transmitting member isvertically overlapped with the first resin layer, wherein an outerportion of the light transmitting member is vertically overlapped withthe body that is disposed outside the empty space, wherein the bottomsurface of the light transmitting member is non-contact from an entiretop surface of the first resin layer by the empty space, wherein adistance between an upper surface of the first resin layer and the topsurface of the light emitting diode chip is equal to or less than 10 um,and a thickness of the second resin layer is equal to or less than 10um.
 20. The ultraviolet light emitting device of claim 19, wherein thesecond resin layer extends from the upper surface of the lighttransmitting layer to the upper surface of side surfaces of the body,and includes an open region having a width wider than or equal to awidth of the bottom surface of the recess, such that the second resindoes not overlap with the first resin layer in a vertical direction.